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| DE475-102N21A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, pulse width limited by TJM Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0 VDSS ID25 Maximum Ratings 1000 1000 20 30 24 144 21 30 5 >200 1800 V V V V A A A mJ V/ns V/ns W W W C/W C/W SG1 SG2 GATE = = = = 1000 V 24 A 0.41 1800W Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol RDS(on) PDC DRAIN Tc = 25C Derate 4.0W/C above 25C Tc = 25C 730 4.5 0.08 0.20 SD1 SD2 Test Conditions Characteristic Values Features TJ = 25C unless otherwise specified min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight 1.6mm (0.063 in) from case for 10 s VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25C VGS = 0 TJ = 125C VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% VDS = 15 V, ID = 0.5ID25, pulse test typ. max. V 5.5 100 50 1 0.41 V nA A mA S +175 C C +175 C C g * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power * * - - * * * cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials 1000 2.5 27 -55 175 -55 300 3 Advantages * Optimized for RF and high speed switching at frequencies to 30MHz * Easy to mount--no insulators needed * High power density DE475-102N21A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. RG Ciss Coss Crss Cstray Td(on) Ton Td(off) Toff Qg(on) Qgs Qgd VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) Back Metal to any Pin VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz typ. 0.3 5500 200 60 46 5 5 5 8 160 35 77 max. pF pF pF pF ns ns ns ns nC nC nC Source-Drain Diode Symbol IS ISM VSD Trr QRM IRM IF = IS, -di/dt = 100A/s, VR = 100V Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 21 144 1.5 200 0.6 8 A A V ns C A Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2% For detailed device mounting and installation instructions, see the "DESeries MOSFET Mounting Instructions" technical note on IXYS RF's web site at www.ixysrf.com/Technical_Support/App_notes.html IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 5,034,796 5,381,025 4,850,072 5,049,961 5,640,045 4,881,106 5,063,307 4,891,686 5,187,117 4,931,844 5,237,481 5,017,508 5,486,715 DE475-102N21A RF Power MOSFET 10000 Ciss Coss Crss Capacitance in pF 1000 100 10 0 100 200 300 400 500 Vds in Volts 600 700 800 900 1000 475-102N21A Capacitances vs Vds DE475-102N21A RF Power MOSFET 102N21A DE-SERIES SPICE Model (Preliminary) The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 1 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: .SUBCKT 102N21A 10 20 30 * TERMINALS: D G S * 1000 Volt 21 Amp 0.41 ohm N-Channel Power MOSFET * REV.A 01-09-02 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 0.3 DON 6 2 D1 ROF 5 7 .1 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 5.5N RD 4 1 0.41 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0247 Rev 4 (c) 2003 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: deiinfo@directedenergy.com Web: http://www.directedenergy.com |
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